Fundamental Studies of Fluoropolymer Photoresists for 157 nm Lithography.

Single Layer Fluoropolymer Resists for 157 nm Lithography

We have developed a family of 157 nm resists that utilize fluorinated terpolymer resins composed of 1) tetrafluoroethylene (TFE), 2) a norbornene fluoroalcohol (NBFOH), and 3) t-butyl acrylate (t-BA). TFE incorporation reduces optical absorbance at 157 nm, while the presence of a norbornene functionalized with hexafluoroisopropanol groups contributes to aqueous base (developer) solubility and e...

Bottom Anti-Reflective Coatings (BARCs) for 157-nm!Lithography

Bottom anti-reflective coatings (BARCs) are essential for achieving the 65-nm node resolution target by minimizing the substrate reflectivity to less than 1% and by planarizing substrates. We believe that the developments in 157-nm BARC products are on track to make them available for timely application in 157-nm lithography. We have made some significant improvements in resist compatibility an...

Design of very transparent fluoropolymer resists for semiconductor manufacture at 157 nm

Photolithography at 157 nm requires development of new photoresists that are highly transparent at this wavelength. Transparent fluoropolymer platforms have been identified which also possess other materials properties required for chemically amplified imaging and aqueous development. Polymers of tetrafluoroethylene (TFE), a fluoroalcohol-substituted norbornene and an acid-labile acrylate ester...

Dissolution behavior of chemically amplified resist polymers for 248-, 193-, and 157-nm lithography

Dissolution behavior of chemically amplified resist polymers for 248-, 193-, and 157-nm lithography The aqueous base development step is one of the most critical processes in modern lithographic imaging technology. Sinusoidal modulation of the exposing light intensity must be converted to a step function in the resist film during the development process. Thus, in designing high-performance resi...

Materials for Advanced Microlithography: Polymers for 157 Nm Lithography and Acid Diffusion Measurements